unisonic technologies co., ltd btc1510f3 npn silicon transistor www.unisonic.com.tw 1 of 3 copyright ? 2014 unisonic technologies co., ltd qw-r223-002. e npn epitaxial planar transistor ? description as a npn darlington transistor the utc btc1510f3 is designed for general purpose amplifier and low speed switching application. ? features * very high bv ceo * very low v ce(sat) * very high current gain ? equivalent circuit ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 btc1510f3l-ta3-t BTC1510F3G-TA3-T to-220 b c e tube btc1510f3l-tf3-t btc1510f3g-tf3-t to-220f b c e tube btc1510f3l-tf1-t btc1510f3g-tf1-t to-220f1 b c e tube btc1510f3l-tn3-r btc1510f3g-tn3-r to-252 b c e tape reel btc1510f3l-tq2-t btc1510f3g-tq2-t to-263 b c e tube btc1510f3l-tq2-r btc1510f3g-tq2-r to-263 b c e tape reel note: pin assignment: b: base c: collector e: emitter ? marking
btc1510f3 npn silicon transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r223-002.e ? absolute maximum rating (t a =25c, unless otherwise specified) parameter symbol ratings unit collector-base voltage v cbo 150 v collector-emitter voltage v ceo 150 v emitter-base voltage v ebo 5 v collector current dc i c 10 a pulse(note 2) 15 collector dissipation t a =25c to-220/to-220f to-220f1 p d 2 w to-252 1.1 w to-263 2 w t c =25c to-220 72 w to-220f/to-220f1 36 w to-252 44 w to-263 60 w junction temperature t j 150 c storage temperature t stg -55 ~ +150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. pulse test: pulse width=100ms ? electrical characteristics parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c =100a, i e =0 150 v collector-emitter breakdown voltage bv ceo i c =5ma, i b =0 150 v base-emitter turn-on voltage (note) v be(on) v ce =3v, i c =5a 2.8 v v ce =3v, i c =10a 4.5 v fec i c =5a 3 v collector cutoff current i cbo v cb =150v, i e =0 200 a collector cutoff current i ceo v ce =150v, i e =0 200 a emitter cutoff current i ebo v eb =5v, i c =0 2 ma on characteristics dc current gain (note) h fe v ce =3v, i c =5a 2 20 k v ce =3v, i c =10a 100 base-emitter saturati on voltage(note) v be(sat) i c =5a, i b =5ma 2 v collector-emitter sa turation voltage (note) v ce(sat) i c =5a, i b =10ma 1.5 v i c =10a, i b =100ma 3 i c =5a, i b =2.5ma 2 note: pulse test: pulse width Q 380 s, duty cycle Q 2%
btc1510f3 npn silicon transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r223-002.e ? typical characteristics collector current, i c (a) collector current, i c (a) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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